3 edition of stationary semiconductor device equations found in the catalog.
stationary semiconductor device equations
Peter A. Markowich
Includes bibliographies and indexes.
|Statement||Peter A. Markowich.|
|LC Classifications||TK7871.85 .M34 1986|
|The Physical Object|
|Pagination||ix, 193 p. :|
|Number of Pages||193|
|LC Control Number||85030252|
The semiconductor Bloch equations (abbreviated as SBEs) describe the optical response of semiconductors excited by coherent classical light sources, such as lasers. They are based on a full quantum theory, and form a closed set of integro-differential equations for the quantum dynamics of microscopic polarization and charge carrier distribution. Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices Proceedings of a Conference held at the Mathematisches Forschungsinstitut, Oberwolfach, July 5–11, Mixed Finite Element Discretization of Continuity Equations Arising in Semiconductor Device Simulation.
Basic Semiconductor Material Science and Solid-State Physics All terrestrial materials are made up of atoms. Indeed, the ancient Greeks put this hypothesis forward over two millennia ago. However, it was not until the twentieth century that the atomic theory of matter became firmly established as an unassailable, demonstrated fact. Apr 09, · Neamen's "Semiconductor Physics and Devices" deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way/5(16).
8. Semiconductors: Theory (references refer to the list of publications given in chapter 12) Experiment and have been modelled qualitatively on the basis of the device fig. with the characteristics fig. discussed in chapter A Model for Pattern. The corresponding model equations are of solution of the semiconductor specific. Under the conditions of both the initial data being the small perturbation of given steady state solution and the boundary strength being small, the global existence of smooth solution to the initial boundary value problem of the relativistic Euler-Poisson equations is proved. The convergence of the global smooth solution to smooth steady state solution in time exponentially is also obtained Author: La-Su Mai, Kaijun Zhang.
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In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians.
In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. Introduction.- 2. Mathematical Modeling of Semiconductor Devices.- 3.
Analysis of the Basic Stationary Semiconductor Device Equations.- 4. Singular Perturbation Analysis of the Stationary Semiconductor Device Problem.- 5. Discretisation of the Stationary Device Problem.- 6. Numerical Simulation - A Case Study.- Notation of Physical Quantities Feb 28, · The Stationary Semiconductor Device Equations by P.
Markowich,available at Book Depository with free delivery worldwide. Get this from a library. The Stationary Semiconductor Device Equations. [Peter A Markowich] -- The static semiconductor device problem is treated in an "applied mathematics" way.
Qualitative properties, e.g. existence and uniqueness of solutions, and quantitative properties, particularly the. The numerical solution of boundary value problems for nonlinear systems of elliptic partial differential equations in general and the static simulation of semiconductor devices in particular usually proceeds in the following steps:Author: Peter A.
Markowich. Find nearly any book by P.A. Markowich. Get the best deal by comparing prices from overbooksellers. Search 'Stationary Semiconductor Device Equations thehit45sradiogroup.com has become a leading book price comparison site: Find and compare hundreds of millions of new books, used books, rare books and out of print books from overJul 12, · () On the stationary semiconductor equations arising in modeling an LBIC technique.
Applied Mathematics & Optimization() Massively parallel methods for semiconductor device thehit45sradiogroup.com by: Analysis and Simulation of Semiconductor Devices Analysis and Simulation of Semiconductor Devices S.
Selberherr No preview available - View all» References to this book. The Stationary Semiconductor Device Equations Peter A. Markowich Limited preview - 3/5(1). The Stationary Semiconductor Device Equations (Computational Microelectronics) by Markowich, P.A.
Springer. Used - Good. Ships from UK in 48 hours or less usually same day. Your purchase helps support the African Children's Educational Trust A-CET. Ex-library, so some stamps and wear, but in good overall condition. % money back guarantee. AN ANALYSIS OF THE SCHARFETTER-GUMMEL BOX METHOD FOR THE STATIONARY SEMICONDUCTOR DEVICE EQUATIONS(*) by J.
MILLER and SONG WANG (X) Communicated by R. TEMAM Abstract. An exponentially fitted box method, known as the Scharfetter-Gummel box method, for the semiconductor device équations in the Slotboom variables is analysed. TheCited by: 8. Oct 19, · Discover Book Depository's huge selection of P A Markowich books online.
It is addressed to both readers who wish to learn semiconductor physics and those seeking to understand semiconductor devices. It is particularly well suited for those.
Existence of stationary solutions to an energy drift-diffusion model for semiconductor devices This book was written in the light of these considerations both in regard to the choice of topics. We consider a one-dimensional bipolar hydrodynamic model of semiconductors.
We are concerned with the uniqueness of stationary solutions in particular. The most difficult point is to obtain the. [International Bibliography of Book Reviews of Schorlarly Literature in the Humanities and Social Sciences] the stationary semiconductor device equations.
wien: springer-verlag. XI, s., 40 bilder, 98 dm. Users without a subscription are not able to see the full content. 1 MOSFET Device Physics and Operation INTRODUCTION A ﬁeld effect transistor (FET) operates as a conducting semiconductor channel with two ohmic contacts – the source and the drain – where the number of charge carriers in the channel is controlled by a third contact –.
COMPUTER METHODS IN APPLIED MECHANICS AND ENGINEERING 84 () NORTH-HOLLAND HEXAHEDRAL FINITE ELEMENTS FOR THE STATIONARY SEMICONDUCTOR DEVICE EQUATIONS C.J. FITZSIMONS, J.J.H. MILLER, S. WANG and C.H. WU Numerical Analysis Group, Trinity College, Dublin 2, Ireland Received 15 April Revised manuscript received 21 July In Cited by: 7.
A Petrov–Galerkin mixed finite element method based on tetrahedral elements for the stationary semiconductor device continuity equations is presented.
This method can be regarded as a natural extension to three dimensions of the well known Scharfetter–Gummel one-dimensional thehit45sradiogroup.com by: 9. the “blue book” series (the Modular Series on Solid State Devices) by Neudeck and Pi-erret, now regrettably out of print but still valuable as a compact introduction to semi-conductor devices.
This book has broader aims, and thus a different set of topics. In Chapter 1 have chosen to discuss only two semiconductor devices, the junction diode. Semiconductor Equations Poisson's and Continuity Equation. Even for high frequencies, where the wavelengths are typically much smaller than the device dimension, the quasi stationary approximation used to justify Poisson's equation is still valid.
Computer Physics Communications 65 () North-Holland Semiconductor device simulation Karl Gustafson Department of Mathematics, University of Colorado, Boulder, CO USA A short account of certain interesting problems in semiconductor physics, process, and device modelling is Cited by: 2.Principles of Semiconductor Devices: Table of Contents.
Short table of contents List of figures, List of tables Title page Table of contents.Power GaN Devices: Materials, Applications and Reliability - Ebook written by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni.
Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read Power GaN Devices: Materials, Applications and Reliability.5/5(1).